InAs/AISb quantum cascade lasers operating near 20 μm
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Abstract
InAs-based quantum cascade lasers (QCLs) operating near 20 μm are demonstrated. A double metal waveguide fabricated by transfer of the laser active region onto a host InAs substrate has been employed in these devices. The threshold current density of 1.6 kA/cm2 at 80 K is lower than that of InP-based QCLs emitting in the same spectral region. The lasers operated in pulsed mode up to 170 K.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">InAs/AISb quantum cascade lasers operating near 20 μm</title><author><name sortKey="Bahriz, M" uniqKey="Bahriz M">M. Bahriz</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut d' Electronique du Sud, Université Montpellier 2/CNRS</s1><s2>34090 Montpellier</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName></affiliation></author><author><name sortKey="Lollia, G" uniqKey="Lollia G">G. Lollia</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut d' Electronique du Sud, Université Montpellier 2/CNRS</s1><s2>34090 Montpellier</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName></affiliation></author><author><name sortKey="Laffaille, P" uniqKey="Laffaille P">P. Laffaille</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut d' Electronique du Sud, Université Montpellier 2/CNRS</s1><s2>34090 Montpellier</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName></affiliation></author><author><name sortKey="Baranov, A N" uniqKey="Baranov A">A. N. Baranov</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut d' Electronique du Sud, Université Montpellier 2/CNRS</s1><s2>34090 Montpellier</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName></affiliation></author><author><name sortKey="Teissier, R" uniqKey="Teissier R">R. Teissier</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut d' Electronique du Sud, Université Montpellier 2/CNRS</s1><s2>34090 Montpellier</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0324523</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0324523 INIST</idno><idno type="RBID">Pascal:13-0324523</idno><idno type="wicri:Area/Main/Corpus">000664</idno><idno type="wicri:Area/Main/Repository">000B04</idno></publicationStmt><seriesStmt><idno type="ISSN">0013-5194</idno><title level="j" type="abbreviated">Electron. lett.</title><title level="j" type="main">Electronics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Active region</term><term>Current density</term><term>Indium arsenides</term><term>Indium phosphide</term><term>Quantum cascade laser</term><term>Semiconductor lasers</term><term>Threshold</term><term>Waveguides</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Arséniure d'indium</term><term>Laser semiconducteur</term><term>Guide onde</term><term>Région active</term><term>Densité courant</term><term>Phosphure d'indium</term><term>Seuil</term><term>Laser cascade quantique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">InAs-based quantum cascade lasers (QCLs) operating near 20 μm are demonstrated. A double metal waveguide fabricated by transfer of the laser active region onto a host InAs substrate has been employed in these devices. The threshold current density of 1.6 kA/cm<sup>2</sup> at 80 K is lower than that of InP-based QCLs emitting in the same spectral region. The lasers operated in pulsed mode up to 170 K.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0013-5194</s0></fA01><fA02 i1="01"><s0>ELLEAK</s0></fA02><fA03 i2="1"><s0>Electron. lett.</s0></fA03><fA05><s2>49</s2></fA05><fA06><s2>19</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>InAs/AISb quantum cascade lasers operating near 20 μm</s1></fA08><fA11 i1="01" i2="1"><s1>BAHRIZ (M.)</s1></fA11><fA11 i1="02" i2="1"><s1>LOLLIA (G.)</s1></fA11><fA11 i1="03" i2="1"><s1>LAFFAILLE (P.)</s1></fA11><fA11 i1="04" i2="1"><s1>BARANOV (A. N.)</s1></fA11><fA11 i1="05" i2="1"><s1>TEISSIER (R.)</s1></fA11><fA14 i1="01"><s1>Institut d' Electronique du Sud, Université Montpellier 2/CNRS</s1><s2>34090 Montpellier</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>1238-1240</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>12270</s2><s5>354000505822130270</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>10 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0324523</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Electronics letters</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>InAs-based quantum cascade lasers (QCLs) operating near 20 μm are demonstrated. A double metal waveguide fabricated by transfer of the laser active region onto a host InAs substrate has been employed in these devices. The threshold current density of 1.6 kA/cm<sup>2</sup> at 80 K is lower than that of InP-based QCLs emitting in the same spectral region. 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